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69‐3: Examination of Degradation Analysis of p‐i‐n Type OLEDs Devices
Author(s) -
Shirakura Daichi,
Okamura Shinji,
Taguchi Yoshihiko,
Takano Hikaru,
Shibamori Takahiro,
Miyamoto Takashi,
Sameshima Junichiro
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14049
Subject(s) - degradation (telecommunications) , dopant , oled , layer (electronics) , materials science , analytical chemistry (journal) , chemistry , doping , optoelectronics , nanotechnology , chromatography , electrical engineering , engineering
Degradation analysis was conducted to p‐i‐n type OLED devices. PL, LDI‐MS, and GCIB‐TOF‐SIMS revealed the degraded layer was EML and molecular formula of the degradation product. GCIB‐TOF‐SIMS clarified the change of n‐dopant with the degradation.