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69‐1: Invited Paper: Trap‐dependent Electrical Characteristics of Organic Semiconductor Devices
Author(s) -
Ko Donghyun,
Lee Jaesang
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14047
Subject(s) - trap (plumbing) , space charge , organic semiconductor , semiconductor , materials science , optoelectronics , electric field , voltage , electrode , electrical resistivity and conductivity , current (fluid) , semiconductor device , electrical engineering , physics , nanotechnology , engineering , electron , layer (electronics) , quantum mechanics , meteorology
Trap states strongly affect the electrical characteristics of organic semiconductor devices. Here, we report how the spatial distribution of the traps affects the current density‐voltage (J‐V) characteristics of single‐charge carrier devices. We found that when the traps are located near a charge‐injecting electrode, the electric field and thus the operating voltage of a device increase, leading to an increased device resistivity. We analyzed the J‐V characteristics vs. position of the traps by assuming that the devices are space‐charge‐limited and the energy levels of the traps follow a Gaussian distribution.