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65‐4: Control of Carrier Injection and Transport Behavior in QLEDs via Modulating Schottky Barrier
Author(s) -
Kim Sun-Kyo,
Kim Yong-Seog
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14034
Subject(s) - optoelectronics , schottky barrier , charge (physics) , schottky diode , materials science , charge carrier , doping , quantum dot , diode , charge control , light emitting diode , charge carrier density , physics , battery (electricity) , power (physics) , quantum mechanics
Carrier injection and transport behavior in quantum dot light‐emitting diodes (QLEDs) was modulated by tuning mobility and Schottky barrier of charge transport layers. Theoretical analysis indicated that not only those 2 parameters investigated but also other parameters including density of charge traps and their energy level must be considered to match charge balance in the QD layers. Experimental results demonstrated that doping strategy could modulate Schottky barrier and mobility of charge transport layers as well as density of charge traps and their energy level. With the improved charge balance, the efficiency of the QLED device was improved from 26 to 38 cd/A.