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65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure
Author(s) -
Lin Kun-Rong,
Lee Chun-Yu,
Ding Wen-Cheng,
Chen Chia-Hsun,
Chien Da-Chen,
Kuo Ya-Pei,
Chen Peng-Yu,
Lu Hsueh-Hsing,
Chiu Tien-Lung,
Lin Bo-Yen,
Lee Jiun-Haw
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14033
Subject(s) - quantum dot , diode , optoelectronics , quantum efficiency , light emitting diode , materials science , work (physics) , physics , thermodynamics
In this work, green top emission quantum dot light‐emitting diodes with different structure, that are normal and inverted structure, were demonstrated. The device characterization of these two device are compared. The QLED with inverted structure exhibits better device performance than normal one. Current efficiency is improved from 26.9 to 42.5 cd/A, as well as the external quantum efficiency is improved from 5.32 to 9.42 %. Operational lifetime of inverted structure is longer and more reliable than normal structure by ~10‐times.