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58‐2: Distinguished Paper: Active Matrix QD‐LED with Top Emission Structure by UV Lithography for RGB Patterning
Author(s) -
Nakanishi Yohei,
Takeshita Tomohiro,
Qu Yang,
Imabayashi Hiroki,
Okamoto Shota,
Utsumi Hisayuki,
Kanehiro Masayuki,
Angioni Enrico,
Boardman Edward A.,
Hamilton Iain,
Zampetti Andrea,
Berryman-Bousquet Valerie,
Smeeton Tim M.,
Ishida Takeshi
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.14006
Subject(s) - photolithography , materials science , lithography , optoelectronics , quantum dot , rgb color model , active matrix , light emitting diode , diode , nanotechnology , thin film transistor , computer science , layer (electronics) , operating system
We have developed full colour top emitting quantum dot light emitting diode (QD‐LED) display driven by a 176 ppi active matrix of metal oxide thin film transistors. Red, green and blue (RGB) QD‐LED sub pixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.