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51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement
Author(s) -
Wu Zhenghui,
Zhang Wenda,
Liu Pai,
Wang Kai,
Sun Xiao Wei
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13978
Subject(s) - quantum dot , optoelectronics , diode , light emitting diode , delocalized electron , electron , materials science , physics , quantum mechanics
Highly delocalized electrons and parasitic emissions are serious problems in InP/ZnS quantum dot light emitting diodes. This work provided several approaches from the perspective of device design and physical mechanism to address the above problems. As a result, high efficiency InP/ZnS quantum dot light emitting diodes were achieved.
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