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48‐1: Invited Paper: Next Generation Highly Efficient and Stable Phosphorescent Emitting Materials For OLEDs
Author(s) -
Choi Byoung Ki,
Cho Yong Suk,
Choi Jong Won,
Kwak Seung Yeon,
Aratani Sukekazu,
Sim Myung Sun,
Koo Hyun,
Kravchuk Dmitry,
Im Kyu Hyun,
Lee Ji Youn,
Kim So Yeon,
Lee Bang Lin,
Kwak Yoon Hyun,
Lee Sung Hun,
Kim Sung Han
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13964
Subject(s) - oled , dopant , common emitter , phosphorescence , optoelectronics , materials science , diode , radiative transfer , quantum efficiency , quantum yield , doping , optics , nanotechnology , physics , layer (electronics) , fluorescence
The efficiency of light emitting materials (dopants) is invariably compromised on moving to the red region of the spectra due to the increase of non‐radiative decay. In order to solve the above problem, we designed a new dopant, and realized organic light emitting diodes (OLEDs) with excellent performance. We achieved extremely high quantum yield of red dopant, fabricated a device with 33% higher efficiency, and improved roll‐off compared to a device with a current state‐of‐the art emitter.

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