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31‐2: Invited Paper: Nanostructures Oxide Thin‐Film Transistors Fabricated by Near‐Field Nanolithography with Enhanced Device Performance
Author(s) -
Huang Kairong,
Chen Zihao,
Hu Sujuan,
Gao Lichao,
Liu Chuan
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13901
Subject(s) - nanolithography , materials science , nanostructure , optoelectronics , heterojunction , thin film transistor , nanoscopic scale , nanotechnology , oxide , doping , layer (electronics) , fabrication , medicine , alternative medicine , pathology , metallurgy
We have developed oxide TFTs with nanostructure by using a strategy based on near‐field nanolithography, such as wrapping insulator structure with nano‐splitting active layer or nanoscale and periodic degenerately doped heterostructures. These nanostructured TFTs enhanced in device performance, compared with normal single gate homogeneous IGZO TFTs.