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24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation
Author(s) -
Wang Sisi,
Shi Runxiao,
Li Jiapeng,
Lu Lei,
Xia Zhihe,
Kwok Hoi Sing,
Wong Man
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13875
Subject(s) - thin film transistor , materials science , degradation (telecommunications) , optoelectronics , gallium , amorphous solid , hydrogen , indium , transistor , amorphous silicon , oxide thin film transistor , silicon , diode , zinc , nanotechnology , electronic engineering , metallurgy , chemistry , electrical engineering , crystalline silicon , crystallography , layer (electronics) , organic chemistry , voltage , engineering
Amorphous indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) with or without fluorinated channels were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that those built with fluorinated IGZO exhibit improved intrinsic resistance against hydrogen‐induced degradation. Such improvement correlates well with the reduced incorporation of hydrogen in the fluorinated channels, as revealed by secondary ion‐mass spectrometry. Fluorinated IGZO TFTs are better suited for integration with hydrogen‐containing devices, such as photo‐diodes based on amorphous hydrogenated silicon and TFTs based on low‐temperature polycrystalline silicon.