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24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS
Author(s) -
Ito Kazuatsu,
Mehadi Aman,
Sano Masahito,
Murashige Shogo,
Ishida Izumi,
Takeda Yujiro,
Matsukizono Hiroshi,
Makita Naoki
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13874
Subject(s) - thin film transistor , backplane , materials science , optoelectronics , current (fluid) , electrical engineering , engineering , nanotechnology , layer (electronics)
IGZO TFT with the same on current as n‐LTPS was fabricated. The saturation on current reached 1 mA, and the off‐state leakage current was below 1 pA. The V th shift under PBT / NBT stress test for the IGZO TFT was 0.1 / −0.1 V, respectively, which was better compared to the n‐LTPS. Furthermore, the IGZO TFT showed an ideal I d ‐V d curve (output characteristics) without any kinks. These results indicate that, a variety of backplanes, from small size smartphones to large area TVs, are possible to be made in a single factory of IGZO.