24‐1:  Invited Paper:  Development of High Quality IGZO‐TFT with Same On‐Current as LTPS | Zendy

Ito Kazuatsu | Zendy; Mehadi Aman | Zendy; Sano Masahito | Zendy; Murashige Shogo | Zendy; Ishida Izumi | Zendy; Takeda Yujiro | Zendy; Matsukizono Hiroshi | Zendy; Makita Naoki | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS

Author(s) -

Ito Kazuatsu,

Mehadi Aman,

Sano Masahito,

Murashige Shogo,

Ishida Izumi,

Takeda Yujiro,

Matsukizono Hiroshi,

Makita Naoki

Publication year - 2020

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13874

Subject(s) - thin film transistor , backplane , materials science , optoelectronics , current (fluid) , electrical engineering , engineering , nanotechnology , layer (electronics)

IGZO TFT with the same on current as n‐LTPS was fabricated. The saturation on current reached 1 mA, and the off‐state leakage current was below 1 pA. The V th shift under PBT / NBT stress test for the IGZO TFT was 0.1 / −0.1 V, respectively, which was better compared to the n‐LTPS. Furthermore, the IGZO TFT showed an ideal I d ‐V d curve (output characteristics) without any kinks. These results indicate that, a variety of backplanes, from small size smartphones to large area TVs, are possible to be made in a single factory of IGZO.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research