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22‐1: Formation of Silicon‐Based Thin‐Film Encapsulation for Fabrication of Highly Flexible OLED Devices
Author(s) -
Jung Eun,
Huh Myung Soo,
Key Sung Hun,
Kim Jung Gon,
Jeon Dong Pyo,
Kim Sae Hong,
Jang Choel Min
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13864
Subject(s) - encapsulation (networking) , oled , materials science , fabrication , atomic layer deposition , flexible display , thin film , optoelectronics , nanotechnology , thin film transistor , layer (electronics) , computer science , medicine , computer network , alternative medicine , pathology
The commercialized OLED display is one of the most attractive display in the 21st century. The OLED display is able to manufacture as a deformable display then before, such as foldable, rollable, and stretchable. Manufacturing the deformable display requires thinner and/or more flexible layers in the inner display. To make a high performance barrier preventing moisture and oxygen for the thinner thin film encapsulation (TFE), we have studied the process for inorganic layer by ALD (Atomic layer deposition) and organic layer by CVD (Chemical vapor deposition). In this study, we evaluated the OLED device deposited by ALD and CVD encapsulation layers. The method introduced in this study confirmed the same level of encapsulation characteristics even in a thickness of about 35% thinner than the conventional thin films encapsulation layer. To perform the evaluation according to the bending radius, a flexibility evaluation of 200,000 cycles was performed at room temperature. Finally, we were confirmed that this encapsulation layer by above process was thinner and more flexible while maintain the encapsulation characteristic rather than conventional encapsulation layer.