21‐1:  Invited Paper:  5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm | Zendy

Shishido Hideaki | Zendy; Katsui Shuichi | Zendy; Kobayashi Hidetomo | Zendy; Nakagawa Takashi | Zendy; Tamatsukuri Yuki | Zendy; Uesaka Shogo | Zendy; Nagata Takaaki | Zendy; Aoyama Tomoya | Zendy; Okazaki Yutaka | Zendy; Ikeda Takayuki | Zendy; Yamazaki Shunpei | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm

Author(s) -

Shishido Hideaki,

Katsui Shuichi,

Kobayashi Hidetomo,

Nakagawa Takashi,

Tamatsukuri Yuki,

Uesaka Shogo,

Nagata Takaaki,

Aoyama Tomoya,

Okazaki Yutaka,

Ikeda Takayuki,

Yamazaki Shunpei

Publication year - 2020

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13861

Subject(s) - optoelectronics , oled , materials science , amoled , diode , transistor , channel (broadcasting) , thin film transistor , pixel , field effect transistor , electrical engineering , nanotechnology , optics , physics , engineering , voltage , active matrix , layer (electronics)

For high‐definition microdisplays with more than several thousands of pixels per inch (ppi), c‐axis‐aligned crystal indium‐gallium‐zinc oxide (CAAC‐IGZO) field‐effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291‐ppi organic light‐emitting diode (OLED) display using CAAC‐IGZO FETs with a channel length of 60 nm.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research