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21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm
Author(s) -
Shishido Hideaki,
Katsui Shuichi,
Kobayashi Hidetomo,
Nakagawa Takashi,
Tamatsukuri Yuki,
Uesaka Shogo,
Nagata Takaaki,
Aoyama Tomoya,
Okazaki Yutaka,
Ikeda Takayuki,
Yamazaki Shunpei
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13861
Subject(s) - optoelectronics , oled , materials science , amoled , diode , transistor , channel (broadcasting) , thin film transistor , pixel , field effect transistor , electrical engineering , nanotechnology , optics , physics , engineering , voltage , active matrix , layer (electronics)
For high‐definition microdisplays with more than several thousands of pixels per inch (ppi), c‐axis‐aligned crystal indium‐gallium‐zinc oxide (CAAC‐IGZO) field‐effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291‐ppi organic light‐emitting diode (OLED) display using CAAC‐IGZO FETs with a channel length of 60 nm.