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9‐3: Advanced Process and Structure of Backplane for Micro LED Display
Author(s) -
Xie Hua-fei,
Mei Xue-ru,
Lu Ma-cai,
Liu Ming-gang,
Liu Nian,
Wen Lei,
Wu Si-jia,
Fan Yong,
Chen Shu-jhih,
Lee Chia-yu,
Zhang Sheng-dong,
Zhang Xin
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13815
Subject(s) - backplane , led display , thin film transistor , materials science , optoelectronics , process (computing) , computer science , electrical engineering , nanotechnology , computer hardware , engineering , operating system , layer (electronics)
Five process improvements for protecting the Micro LED display from HTHHO were evaluated by measuring the Vth shift of top‐gate IGZO TFT backplane. The results showed that the Vth value of Micro LED backplane was placed at HTHHO (60 °C, 90% RH) for 1000h drifted less than 1.5V after protected by the inorganic/ organic film of TF‐1/TF‐2.