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7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process
Author(s) -
Nakata Mitsuru,
Ochi Mototaka,
Takei Tatsuya,
Tsuji Hiroshi,
Miyakawa Masashi,
Nishiyama Kohei,
Nakajima Yoshiki,
Shimizu Takahisa
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13809
Subject(s) - thin film transistor , threshold voltage , optoelectronics , materials science , transistor , channel (broadcasting) , irradiation , laser , gate oxide , voltage , electron mobility , semiconductor , electrical engineering , nanotechnology , layer (electronics) , optics , engineering , physics , nuclear physics
Top‐gate self‐aligned thin‐film transistors (TFTs) with a high carrier mobility of 31 cm 2 /Vs were developed using the oxide semiconductor In‐Ga‐Zn‐Sn‐O. The threshold‐voltage shift in short‐channel top‐gate TFTs was suppressed by application of a laser irradiation process to reduce the resistance of the source/drain regions