7‐4:  Late‐News‐Paper:  Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process | Zendy

Nakata Mitsuru | Zendy; Ochi Mototaka | Zendy; Takei Tatsuya | Zendy; Tsuji Hiroshi | Zendy; Miyakawa Masashi | Zendy; Nishiyama Kohei | Zendy; Nakajima Yoshiki | Zendy; Shimizu Takahisa | Zendy

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7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process

Author(s) -

Nakata Mitsuru,

Ochi Mototaka,

Takei Tatsuya,

Tsuji Hiroshi,

Miyakawa Masashi,

Nishiyama Kohei,

Nakajima Yoshiki,

Shimizu Takahisa

Publication year - 2020

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13809

Subject(s) - thin film transistor , threshold voltage , optoelectronics , materials science , transistor , channel (broadcasting) , irradiation , laser , gate oxide , voltage , electron mobility , semiconductor , electrical engineering , nanotechnology , layer (electronics) , optics , engineering , physics , nuclear physics

Top‐gate self‐aligned thin‐film transistors (TFTs) with a high carrier mobility of 31 cm 2 /Vs were developed using the oxide semiconductor In‐Ga‐Zn‐Sn‐O. The threshold‐voltage shift in short‐channel top‐gate TFTs was suppressed by application of a laser irradiation process to reduce the resistance of the source/drain regions

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