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7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors
Author(s) -
Uraoka Yukiharu,
Takahashi Takanori,
Kise Kahori,
Bermundo Juan Paolo,
Fujii Mami N.,
Uenuma Mutsunori,
Ishikawa Yasuaki
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13807
Subject(s) - degradation (telecommunications) , materials science , optoelectronics , oxide , thin film transistor , transistor , threshold voltage , gate oxide , voltage , electrical engineering , nanotechnology , layer (electronics) , metallurgy , engineering
The existence of hot carriers in an oxide thin‐film transistor was confirmed by using an emission analysis technique. It has been clarified that degradation due to hot carriers causes degradation phenomena such as a decrease in on‐current without shift in threshold voltage, which has not been seen so far, in high‐mobility device. Moreover, it was confirmed by photo emission analysis that the main degradation factor was hot carriers against dynamic stress in which a pulse voltage was applied to the gate.