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Ultrasonic Spray Deposition of a‐IGZO Thin Film Transistor on Substrate with Hydrophilic Patterns
Author(s) -
Qiu Hengda,
Sun Hejing,
Zheng Libin,
Xiao Juncheng,
Zhou Hang
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13786
Subject(s) - thin film transistor , materials science , fabrication , substrate (aquarium) , amorphous solid , optoelectronics , deposition (geology) , transistor , ultrasonic sensor , nanotechnology , layer (electronics) , electrical engineering , chemistry , crystallography , voltage , medicine , paleontology , oceanography , alternative medicine , physics , engineering , pathology , sediment , geology , acoustics , biology
Solution‐processed amorphous Indium Gallium Zinc Oxide (a‐IGZO) is a promising method for lower down the fabrication cost a‐IGZO thin‐film transistor (TFTs). Here we demonstrate an ultrasonic sprayed a‐IGZO TFT, whose fabrication is assisted by hydrophobic parallel stripe patterns to circumvent the coffee‐ring effect. Device mobility of the sprayed a‐IGZO TFT is estimated to be 1.74 cm 2 V −1 s −1 .