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Excellent Uniformity and Reliability Top‐Gate Self‐Aligned IGZO TFTs with Cu Electrode
Author(s) -
Ma Qian,
Zhou Xing-Yu,
Hsu Yuan-Jun,
Wu Yuan-Chun,
Zhang Sheng-Dong
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13785
Subject(s) - amoled , thin film transistor , materials science , optoelectronics , threshold voltage , active matrix , amorphous solid , reliability (semiconductor) , electrode , transistor , diode , gate oxide , voltage , electrical engineering , nanotechnology , layer (electronics) , chemistry , power (physics) , physics , engineering , organic chemistry , quantum mechanics
A top‐gate self‐aligned oxide amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) was examind for active matrix organic light‐emitting diode (AMOLED) display. The device exhibited robust device performance, such as excellent threshold voltage uniformity, high mobility, and good gate bias stress stabilities. Furthermore, remarkable short channel characteristics were achieved