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Low Temperature Deposition of High‐Quality Silicon Oxynitride (SiON) for OLED Encapsulation via Conventional PECVD
Author(s) -
Miao Yang,
Qian Jiajia,
Li Jinchuan,
Yang Zhongguo,
Du Yanying,
Chu Jinxing,
Wang Min,
Cao Weiran
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13784
Subject(s) - materials science , plasma enhanced chemical vapor deposition , passivation , oled , silicon oxynitride , dangling bond , optoelectronics , chemical vapor deposition , diode , silicon , nanotechnology , silicon nitride , layer (electronics)
Thin film encapsulation (TFE) was an efficient way to guarantee the reliability of organic light emitting diodes (OLEDs). To passivate the moisture penetration, the TFE barriers should have low water vapor transmission rate (WVTR). In this study, high quality SiON barrier with good passivability was achieved by adjusting the deposition pressure and power of plasma‐enhanced chemical vapor deposition (PECVD). We successfully achieve a SiON film with few dangling bonds and defects, which showed a WVTR of 1.07×10 −4 gm −2 d −1 at the thickness of 750 nm.