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Supercritical Fluid Oxidation Methodology on a‐IZAO Thin‐Film Transistors
Author(s) -
Liu Qi,
Li Lei,
Zhang Jiaona,
Zhang Ziwei,
Chang Kuanchang
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13738
Subject(s) - supercritical fluid , thin film transistor , fourier transform infrared spectroscopy , materials science , x ray photoelectron spectroscopy , dielectric , transistor , layer (electronics) , ion , optoelectronics , chemical engineering , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , chromatography , organic chemistry , voltage , engineering
A novel oxidation treatment of low‐temperature supercritical fluids is proposed in the research, which is able to improve the comprehensive performance of the a‐IGZO thin‐film transistors (TFTs) under low temperature. After the treatment, the subthreshold swing (SS) of the device is reduced from 0.44 V/dec to 0.24 V/dec. Meanwhile, the mobility and Ion/Ioff current ratio of the device are increased from 4.70 cm 2 /Vs to 8.53 cm 2 /Vs and 5.43x10 6 to 1.23x10 8 , respectively. Through the material analysis including Fourier transform infrared spectroscopy (FTIR) and X‐ray photoelectron shows that the supercritical treatment improves the oxidation level of a‐IGZO layer and dielectric layer, and passivates the defects in the dielectric layer.