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P‐13.8: Influences of Passivation Hole Etching on the ITO and Metal Contact for Bottom Emission AMOLED Display
Author(s) -
Fan Ying-chun,
Zhang Xiao-xing,
Im Jang-soon
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13713
Subject(s) - passivation , etching (microfabrication) , materials science , amoled , optoelectronics , oled , electrode , metal , thin film transistor , metallurgy , nanotechnology , layer (electronics) , active matrix , chemistry
A top‐gate self‐aligned a‐IGZO TFT backplate with white OLED and color filter was demonstrated in this paper. Three kind of PV (passivation) hole etching sequences noted as case 1~3, were studied to verify the contact between ITO and Source/Drain electrode. For case 3, PV hole etching process after PLN patterning shows smooth metal surface and excellent panel performance. In contrast, Sourse and Drain metal corrosion occurred due to non‐uniform PV film deposition in other two cases , resulting in bad contact between ITO and S/D metal and poor panel performance.