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P‐13.3: The Analysis and Improvement of Dim Dark Line Caused By Vth Drift in AMOLED Full Contact Test
Author(s) -
Yu AI,
Xuewu XIE,
Yuqing PENG,
Xinzhu WANG
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13708
Subject(s) - amoled , line (geometry) , dark current , voltage , materials science , optoelectronics , physics , composite material , mathematics , photodetector , geometry , thin film transistor , layer (electronics) , quantum mechanics , active matrix
In this paper we investigated the dim dark line in AMOLED full contact test. The influence of EL aging and Vth drift were analyzed and compared, and the conclusion that Vth drift was the main reason which caused the dim dark line was achived. We also provided a solution that connecting the ESD ring to the ESD line in low voltage instead of connecting it to the VDD line in high voltage, and the dim dark line was eliminated effectively.