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P‐11.9: Study on process conditions of planarization layer in FFS mode using a‐IGZO TFTs
Author(s) -
Yuan Chun-Ge,
Shi Yu,
Huang Qiao,
Li Zhu-Hui,
Wang Kai-Jun,
Zhang Li,
Chen Shu-Jhih,
Lee Chia-Yu
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13696
Subject(s) - chemical mechanical planarization , passivation , materials science , layer (electronics) , optoelectronics , electrode , capacitance , composite material , chemistry
The the polymer film on array (PFA) as planarization layer is important in FFS(Fringe‐Field Switching) and COA(Color filter on Array)display mode,according to its liquid crystal alignment is horizontal. The planarization serves not only as a smooth surface for device build‐up,but also it can reduce parasitic capacitance between metal layers. In this paper,we found that the planarization layer is easily deamged by subsequent processes because it is organic. It found that when the silicon oxide (SIOx)as passivation layer slowly deposited on the common ITO upon planarization layer , the planarization layer would be damaged seriously.And the demage degree is related to siloxane content in PFA and subsequent layer incluse the common ITO electrode thickness and and passivation layer's process parameters and materials between common electrode and pixel electrode.