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P‐9.13: A Vertical Type Photodetector Based on All‐inorganic Perovskite Quantum Dots
Author(s) -
Yan Shikai,
Zhang Xu,
Li Qing
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13682
Subject(s) - photodetector , perovskite (structure) , quantum dot , optoelectronics , materials science , indium tin oxide , layer (electronics) , indium , quantum efficiency , oxide , light emitting diode , nanotechnology , chemistry , metallurgy , crystallography
In this work, the vertical type photodetector (PD) based on CsPbBr 3 QDs with a structure of indium tin oxide (ITO)/ zinc oxide (ZnO)/ CsPbBr 3 QDs/ Au is reported. In this device, the ZnO layer acts as a buffer layer, which can improve the uniformity and surface coverage of the CsPbBr 3 QDs film to eliminate the current leakage. As a result, the on/ off ratio, D* and rise time (decay time) of CsPbBr3/ZnO hybrid PD is measured to be 2.2x10 4 , 1.06x10 11 and 62ms (82ms) under low reverse bias. This work inspires the development of vertical type photodetectors based on the all‐inorganic perovskite quantum dots.

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