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P‐9.3: The representation of monochromatic blue Micro‐LED arrays with 1984 ppi
Author(s) -
Guo Enqing,
Mi Lei,
Wang Yan,
Chen Bo,
Tian Wenya,
Liu Haiyan,
Li Qing,
Wang Chenggong,
Xing Rubo
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13672
Subject(s) - materials science , optoelectronics , light emitting diode , chip , sapphire , backplane , contactor , diode , current (fluid) , optics , power (physics) , electrical engineering , physics , engineering , laser , quantum mechanics
Blue InGaN/GaN Micro‐LED arrays based on silicon and sapphire substrates were fabricated respectively. The LED chips with 12.8 µm pixel pitch share a common n contactor in a 960*540 LED array. The driving current for a single LED chip with 8 µm mesa reaches as large as 20 mA, which indicates its current density is much larger than that of LEDs even in high power lighting application. Meanwhile, the reverse leakage current of a single 8µm size LED chip under ‐5V bias is below 10 pA, which falls within the range of a normal leakage current level for InGaN/GaN LED. The heat pressing bonding process between LED array and test backplane was also carried out for I‐V‐L test. The test results of LED arrays were presented.