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P‐7.6: Analysis between Subgap Density of State and NBIS of Top Gate a‐IGZO TFTs
Author(s) -
Han Ying,
Gu Pengfei,
Liu Fengjuan,
Liu Wei,
Wang Ling,
Zhang Xing,
Lin Yicheng,
Sun Hongda,
Song Young Suk,
Ning Ce,
Yuan Guangcai,
Wu Zhongyuan
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13657
Subject(s) - monochromatic color , amorphous solid , thin film transistor , materials science , optoelectronics , capacitance , density of states , voltage , electrical engineering , condensed matter physics , optics , physics , chemistry , nanotechnology , crystallography , engineering , layer (electronics) , electrode , quantum mechanics
Subgap density of states (DOS) in amorphous‐InGaZnO4(a‐IGZO) influence the electrical property of TFT. In this paper, the donor‐like defects are extracted by using a technique based on monochromatic photonic capacitance voltage technique (MPCV). A white light source is used, which is different from MPCV. The result by contrastive analysis between DOS and NBIS, showed that the donor‐like defects (gD) were strongly correlated to NBIS. This techique can be used in analyzing the electrical properties of TFT.