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P‐7.3: Study on Transmittance, Color Shift and Gamut of Dielectric Multi‐layers
Author(s) -
Yi Ning-Bo,
Li Li-Xia,
Long Si-Bang,
Yan Sen,
Zhao Feng,
Chiu Chung-Yi,
Ray Lin,
Ge Shi-Min,
Li Shan,
Zhang Sheng-Dong
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13654
Subject(s) - gamut , transmittance , materials science , dielectric , thin film transistor , passivation , optoelectronics , insulator (electricity) , aperture (computer memory) , optics , layer (electronics) , composite material , physics , acoustics
The layered structure of SiOx and SiNx is a good candidate to be gate insulator and passivation layers in IGZO TFT. However, this complex layered structure could introduce issues of transmittance, color shift and gamut change at aperture area in single glass of TFT side.