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P‐6.9: High‐reliability a‐Si:H TFT with Repressing Photo‐degradation on G8.6 LCDs
Author(s) -
Chao Wei,
An-Thung Cho,
Hejing Zhang,
Qionghua Mo,
Zhen Liu,
Fengyun Yang,
Kaijun Liu,
James Hsu
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13645
Subject(s) - thin film transistor , materials science , degradation (telecommunications) , optoelectronics , reliability (semiconductor) , liquid crystal display , layer (electronics) , transistor , amorphous silicon , amorphous solid , oxide thin film transistor , silicon , electronic engineering , nanotechnology , electrical engineering , crystalline silicon , chemistry , crystallography , engineering , power (physics) , physics , quantum mechanics , voltage
Hydrogenated amorphous silicon (a‐si:H) is still applied to the mass production in large size liquid crystal display (LCD) as the major active layer material. In this paper, we successfully fabricated high‐optical‐quality a‐si:H thin film transistor (TFT) on G8.6 LCDs. Photo‐stability of a‐si:H TFT with 4‐mask process was enhanced by restructuring the gate insulating layer (GI) structure. With using this advanced manufacturing method, the photo‐degradation of devices was repressed and the optical performance was improved.