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P‐6.5: A Study about The Effect of Cu Film Recrystallization on Resistivity
Author(s) -
Hu Xiaobo,
Zhai Yuhao
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13641
Subject(s) - recrystallization (geology) , annealing (glass) , electrical resistivity and conductivity , materials science , grain boundary , metallurgy , grain size , thin film , composite material , microstructure , nanotechnology , electrical engineering , geology , paleontology , engineering
In this paper, we investigated the recrystallization process of Cu films. By annealing at a high temperature of 300°C or above, the grain size of Cu films remarkably increasesd, and the number of grain boundaries decreased. Annealing helped to restructure of the films, causing to improve the electron transfer rate and the resistance of films droped by 15%.So that the thickness of the deposited Cu films can be reduced to achieve the same resistance, the production cost can be saved, and the production efficiency of the PVD machine will be improved.