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P‐5.8: High‐performance field effect transistor based on welded In 2 O 3 nanobelts with low temperature process
Author(s) -
Fu Chuanyu,
Shan Fukai
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13631
Subject(s) - china , citation , library science , engineering physics , engineering , computer science , political science , law