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P‐5.2: Aqueous Sr‐doped In 2 O 3 TFT stability under negative bias illumination stress
Author(s) -
Zhou Youhang,
Li Jun,
Yang Yaohua,
Li Xifeng,
Zhang Jianhua
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13625
Subject(s) - thin film transistor , doping , materials science , aqueous solution , analytical chemistry (journal) , x ray photoelectron spectroscopy , oxygen , stress (linguistics) , stability (learning theory) , vacancy defect , optoelectronics , condensed matter physics , chemistry , nanotechnology , nuclear magnetic resonance , physics , linguistics , philosophy , organic chemistry , layer (electronics) , chromatography , machine learning , computer science
In this paper, the Sr‐doped In 2 O 3 thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In 2 O 3 TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping.