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P‐4.6: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals
Author(s) -
孙研,
周子澍,
黄振,
吴江滨,
周柳江,
程阳,
刘金秋,
朱超,
刘开辉,
王晓勇,
王建浦,
黄维,
WANG Qi; LIU Xun-Cong; XIA Lin
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13621
Subject(s) - heterojunction , materials science , monolayer , photoluminescence , semiconductor , optoelectronics , nanotechnology , van der waals force , thin film , quenching (fluorescence) , optics , fluorescence , chemistry , physics , organic chemistry , molecule
To explore new constituents in two‐dimensional materials and to combine their best in van der Waals heterostructures, are in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI 2 crystals as thin as few‐layers are first synthesized, particularly through a facile low‐temperature solution approach with the crystals of large size, regular shape, different thicknesses and high‐yields. As a prototypical demonstration of flexible band engineering of PbI 2 ‐based interfacial semiconductors, these PbI 2 crystals are subsequently assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is strongly enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers, but type I band alignment in MoS 2 /PbI 2 stacks where fast‐transferred charge carriers accumulate in MoS 2 with high emission efficiency, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks with separated electrons and holes suitable for light harvesting. Our results demonstrate that MoS 2 , WS 2 , WSe 2 monolayers with very similar electronic structures themselves, show completely distinct light‐matter interactions when interfacing with PbI 2 , providing unprecedent capabilities to engineer the device performance of two‐dimensional heterostructures. 1图 1 异质结中 PbI 2 引起的MoS 2 发光增强与WSe 2 发光 淬灭