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P‐1.16: Top‐gate Self‐aligned InGaZnO TFTs with Copper Light Shield Layer
Author(s) -
Lin ZhenGuo,
Zhou XingYu,
Ma Qian,
Hsu YuanJun,
Im JangSoon,
Wu Yuan-chun
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13610
Subject(s) - materials science , layer (electronics) , buffer (optical fiber) , optoelectronics , copper , shield , thin film transistor , reliability (semiconductor) , composite material , metallurgy , electrical engineering , petrology , power (physics) , physics , quantum mechanics , geology , engineering
In this paper, top‐gate self‐aligned a‐IGZO TFTs with copper light shield layer were fabricated. In order to prevent Cu oxidation phenomenon, a SiNx buffer interlayer layer was added. TFT with SiNx buffer interlayer shows excellent V TH uniformity on Gen. 4.5 glass and good PBTS and NBTIS reliability. After these optimization of the thickness of SiNx layer, the Vth shift of PBTS and NBTIS could be improved to 0.5 V and ‐0.8 V.