P‐1.11: Relationship between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate a‐IGZO Thin Film Transistors

We study the effect of source/drain resistance (R SD ) on the effective mobility (µ eff ) of self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin film transistors (TFTs). The mathematical equation of the relationship between 1/µ eff and R SD obtained by a theoretical derivation exhibits that 1/µ eff is a quadratic function of R SD , and the relationship is approximately linear when R SD is small enough. This relationship is demonstrated by using a technology computer aided design (TCAD) simulation. With the mathematical equation, a simple calculation can predict the extent of µ eff degradation induced by R SD in various TFTs, and the effect of R SD on the µ eff when the TFTs are scaled down is discussed.