P‐1.11: Relationship between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate a‐IGZO Thin Film Transistors | Zendy

Peng Hao | Zendy; Zhang Shengdong | Zendy

Premium

P‐1.11: Relationship between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate a‐IGZO Thin Film Transistors

Author(s) -

Peng Hao,

Zhang Shengdong

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13605

Subject(s) - thin film transistor , materials science , amorphous solid , optoelectronics , transistor , quadratic equation , condensed matter physics , electrical engineering , nanotechnology , mathematics , chemistry , physics , engineering , crystallography , voltage , geometry , layer (electronics)

We study the effect of source/drain resistance (R SD ) on the effective mobility (µ eff ) of self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin film transistors (TFTs). The mathematical equation of the relationship between 1/µ eff and R SD obtained by a theoretical derivation exhibits that 1/µ eff is a quadratic function of R SD , and the relationship is approximately linear when R SD is small enough. This relationship is demonstrated by using a technology computer aided design (TCAD) simulation. With the mathematical equation, a simple calculation can predict the extent of µ eff degradation induced by R SD in various TFTs, and the effect of R SD on the µ eff when the TFTs are scaled down is discussed.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research