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P‐1.11: Relationship between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate a‐IGZO Thin Film Transistors
Author(s) -
Peng Hao,
Zhang Shengdong
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13605
Subject(s) - thin film transistor , materials science , amorphous solid , optoelectronics , transistor , quadratic equation , condensed matter physics , electrical engineering , nanotechnology , mathematics , chemistry , physics , engineering , crystallography , voltage , geometry , layer (electronics)
We study the effect of source/drain resistance (R SD ) on the effective mobility (µ eff ) of self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin film transistors (TFTs). The mathematical equation of the relationship between 1/µ eff and R SD obtained by a theoretical derivation exhibits that 1/µ eff is a quadratic function of R SD , and the relationship is approximately linear when R SD is small enough. This relationship is demonstrated by using a technology computer aided design (TCAD) simulation. With the mathematical equation, a simple calculation can predict the extent of µ eff degradation induced by R SD in various TFTs, and the effect of R SD on the µ eff when the TFTs are scaled down is discussed.