P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique | Zendy

Tao Jinao | Zendy; Chang Baozhu | Zendy; Zhang Shengdong | Zendy

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P‐1.7: Self‐aligned Top‐gate a‐ZrInZnO Thin‐Film Transistors Fabricated by Cosputtering Technique

Author(s) -

Tao Jinao,

Chang Baozhu,

Zhang Shengdong

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13601

Subject(s) - materials science , thin film transistor , subthreshold slope , optoelectronics , subthreshold conduction , stress (linguistics) , transistor , field effect transistor , electrical engineering , nanotechnology , layer (electronics) , voltage , engineering , linguistics , philosophy

Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm 2 /(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.

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