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40.5: TFT Overlaiding Materials For Decreasing Arounding Gap Mura
Author(s) -
Li Wen-Ying,
Xiong Pengpeng
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13526
Subject(s) - mura , thin film transistor , materials science , liquid crystal display , electrical engineering , optoelectronics , forensic engineering , computer science , composite material , engineering , layer (electronics)
To overcome the arounding gap mura(AGM) problem of VA TFT LCD panels caused by the seewsaw effection of glass gravity[1‐2]. There are so many devices in GOA panel border which request the material could not be placed consodering the reliabity of devices,there are a gap in both of AA and dummy border the ΔH is much more, the JNDAGM is worse[3].In this paper, we study different materials overlaided on the devices of GOA circuit in 65UD and 32FHD which were produced in PFA process, PS and col or on array glass.The research indicates that ΔH is controlled less than 0.5um and ratio range is from 2 to 14 the JND of AGM can be controlled in the specification.