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34.5: Four‐mask process Architecture using NH3 plasma treatment technology for Image Sticking Improvement in 32‐inch TV Product
Author(s) -
Yang Feng-yun,
Cho An-Thung,
Hsu James,
Liu Zhen,
Liu Kai-jun,
Chen Wade,
Lu York
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13500
Subject(s) - materials science , plasma , plasma enhanced chemical vapor deposition , process (computing) , thin film transistor , optoelectronics , computer science , nanotechnology , silicon , layer (electronics) , physics , operating system , quantum mechanics
A new method to improve the interface of A‐Si and SiNx in A‐Si TFT process, the influence of H content in PECVD system equipment and the A‐Si remain to image sticking are studied in the paper. The suitable NH3 plasma pretreatment power and time or A‐Si remain can decease the leakage current and to overcome the image sticking in four‐mask process