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22.2: The influence of Oxygen Partial Pressure on the Performance of back‐channel‐etched a‐ZTO Thin‐Film Transistors
Author(s) -
Zuo Hongyang,
Zhang Xiaodong,
Yang Yukun,
Yang Huan,
Zhang Shengdong
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13445
Subject(s) - thin film transistor , partial pressure , materials science , sputtering , threshold voltage , transistor , optoelectronics , oxygen , layer (electronics) , voltage , field effect , electrical engineering , thin film , nanotechnology , chemistry , organic chemistry , engineering
In this work, we demonstrate that back‐channel‐etched a‐ZTO thin‐film transistors (TFTs) are close to realize industrial mass production. The effects of sputtering oxygen partial pressure on the electrical characteristics were mainly explored. Results indicated that both of sub‐threshold swing (SS) and field‐effect mobility (µ sat ) decreases as oxygen partial pressure increases, while threshold voltage (V th ) increases. The optimal TFTs exhibited the excellent performances: a modest µ sat of 7.30 cm 2 /Vs, a suitable V th of 5.29V and the SS of 0.41V/decade. Not only the variation of V th shift (ΔV th ) is +1.14 under PBS, but also ΔV th is ‐0.56 under NBS. Compared with IGZO channel layer, the promising ZTO material is abundant and non‐toxic. Therefore relevant TFTs prospectively contribute to reduce industrial production costs and environmental protection.