Premium
15.3: Asymmetric Conductance of Oxide Thin‐Film Transistors Induced by Top‐Gate Effect of Drain Overlap Capacitance
Author(s) -
Huang Hongtao,
Zhang Qin,
Dai Chao,
Wang Zhijun
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13420
Subject(s) - thin film transistor , capacitance , materials science , optoelectronics , conductance , transistor , oxide , gate oxide , electrical engineering , condensed matter physics , nanotechnology , chemistry , electrode , engineering , layer (electronics) , physics , metallurgy , voltage
IGZO TFT has been widely used in flat‐panel displays and its good electrical characteristics are the key to make high‐performance products. This paper investigated the influence of Top‐Gate effect caused by drain overlap capacitance on the transfer characteristic and output characteristic of IGZO TFT (W/L=15.6um/8um) by experimental measurements and TCAD simulations.