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15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors
Author(s) -
Park Sang-Hee Ko,
Kim Daeho,
Jeong Wooseok,
Lee Seung-Hee,
Winkler Jörg,
Schmidt Hennrik
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13418
Subject(s) - thin film transistor , materials science , electrode , transistor , etching (microfabrication) , oxide , optoelectronics , barrier layer , layer (electronics) , channel (broadcasting) , electrical engineering , nanotechnology , metallurgy , chemistry , engineering , voltage
We investigated effect of Cu barrier materials on the back channel etched (BCE) oxide thin film transistor (TFT). When using Cu etchant, MoAl and Mo‐Al‐Ti show better etch selectivity for Al:ITZO layer than Mo‐Ti. The BCE TFTs with Cu barrier source/drain layers show good S.S. and V on characteristics with mobility higher than 35 cm 2 /V.s.