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1.2: Invited Paper: Dynamic threshold voltage compensation IGZO‐GOA circuit for AMOLED display
Author(s) -
Xue Yan,
Han Bai-Xiang,
Wang Xian,
Zhou Shuai,
Liao Cong-Wei,
Zhang Sheng-Dong,
Chaw Gary,
Lu Po-Yen,
Wu Yuan-Chun
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13366
Subject(s) - thin film transistor , threshold voltage , materials science , compensation (psychology) , amoled , optoelectronics , transistor , voltage , electronic circuit , signal (programming language) , pulse (music) , electrical engineering , electronic engineering , computer science , engineering , nanotechnology , layer (electronics) , psychology , active matrix , psychoanalysis , programming language
A dual‐gate amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) has been proposed and designed in this work. Based on this specific structure, a technologically advanced external Vth compensation system, where Vth can be controllable by an external DC signal source, has been developed for gate driver on array (GOA). Subsequently, the working mode of this circuit was introduced. Moreover, detailed simulation has been performed to study the appropriate process window. Finally, the proposed GOA circuit exhibited stable high‐voltage output pulse, meanwhile, the lifetime showed an significant improvement with the utilization of the external Vth compensation system. It should be also mentioned that a wide pulse of 3.6ms has been obtained to sense Vth of driving TFTs in pixel circuits.