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P‐177: Study of AMOLED short‐term image sticking mechanism and improvement
Author(s) -
Qin Wei,
Peng Kuan-Jun,
Liu Dong-ni,
Yang Zhen-Zhong,
XU Zhi-Qiang,
Ten Wan-Peng,
Li Sheng-Nan,
Li Xiao-Long,
Wang Tie-Shi,
Yang Jin,
Zhang Li-Lei,
Jun Jung-Mok
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13334
Subject(s) - oled , thin film transistor , amoled , brightness , optoelectronics , materials science , pixel , transistor , luminance , computer science , voltage , electrical engineering , optics , physics , artificial intelligence , nanotechnology , engineering , layer (electronics) , active matrix
>We successfully developed an OLED pixel circuit which has shorter OLED image sticking time and better first frame brightness ratio. The root causes of short‐term image sticking (STIS) was also studied. The effects of TFT and EL were tested separately. By matching with the phenomenon of STIS, it was confirmed that the reason of STIS is related to the characteristic of OLED driving thin film transistor (DTFT). DTFT has different stress conditions under black/white picture, resulting in difference of OLED current under the gray picture. We could minimize the differences by modifying circuit reset driving timing to improve the STIS.