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P‐64: Mechanism Analysis of Defects on the Organic Film Process
Author(s) -
Zhang Xiaoxiang,
Ding Xiangqian,
Song Yongzhi,
Liu Mingxuan,
Jia Yihe,
Wu Zumou,
Li Xiaolong,
Han Hao,
Chen Weitao
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13219
Subject(s) - materials science , outgassing , production line , mechanism (biology) , pixel , process (computing) , yield (engineering) , line (geometry) , optoelectronics , composite material , optics , computer science , chemistry , mechanical engineering , physics , engineering , geometry , mathematics , organic chemistry , quantum mechanics , operating system
Mechanism of pixel defect and dark‐line defect on the organic film process are studied in this paper, and improvement methods are also given. Reducing outgas by increasing the organic holes can avoid cracking in Org/PVX/ITO laminated structure. Increasing exposure dose can remove ITO residual in fan‐out zone, and mask design value that compensate the rise of DICD by increasing exposure dose are also given. Through the above improvement methods, pixel defect and dark‐line defect are solved and yield is enhanced from 50.2% to 99% which meets the requirement of mass production.