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P‐61: Analytical Method of Small‐Sized Module Stress Mura Based on the Finite‐Element Simulation
Author(s) -
Zhang Bingchuan,
Zhou Gege,
Li Dejun
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13216
Subject(s) - mura , finite element method , stress (linguistics) , enhanced data rates for gsm evolution , brightness , structural engineering , leakage (economics) , position (finance) , materials science , computer science , engineering , mechanics , optics , physics , optoelectronics , artificial intelligence , liquid crystal display , linguistics , philosophy , finance , economics , macroeconomics
Uneven brightness (Mura) will be observed in edge of active area (AA) which position corresponding to side of IC. This light leakage phenomenon is due to thermal stress after COG bonding. Discussing the mechanism and defining a method to evaluate quantitatively. It can be extended to study other stress Mura.