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P‐28: Novel Asymmetric Source‐drain Thin Film Transistors Fabricated by Atomic Layer Deposition
Author(s) -
Li Huijin,
Dong Junchen,
Han Dedong,
Yu Wen,
Yi Zhuang,
Zhang Shengdong,
Zhang Xing,
Wang Yi
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13177
Subject(s) - atomic layer deposition , thin film transistor , materials science , layer (electronics) , optoelectronics , deposition (geology) , transistor , dielectric , nanotechnology , electrical engineering , voltage , paleontology , engineering , sediment , biology
Novel asymmetric source‐drain thin film transistors (TFTs) have been fabricated. The Al 2 O 3 dielectric and ZnO channel are deposited in turn by atomic layer deposition without vacuum breakage to decrease trap density. The devices under inner‐drain bias conditions exhibit I on /I off ratio of 3.1 ×10 9 , SS of 71 mV/dec and good electrical stability.