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P‐27: A Novel Pixel Circuit with Threshold Voltage Variation Compensation in Three‐Dimensional AMOLED on Silicon Microdisplay
Author(s) -
Zeng Weiling,
Li Chenglin,
Zhang Dewei,
Huang Jie,
Wen Jinyuan,
Liu Binjie,
Lin Hesheng,
Zhang Shengdong,
Zhang Min
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13176
Subject(s) - amoled , pixel , dot pitch , materials science , threshold voltage , transistor , electronic circuit , diode , optoelectronics , line (geometry) , voltage , electrical engineering , optics , physics , thin film transistor , engineering , active matrix , mathematics , nanotechnology , layer (electronics) , geometry
A novel pixel driving circuit for high resolution and high image quality organic light emitting diode on silicon three‐dimensional microdisplays is proposed in this paper. The pixel circuit is composed of four P‐channel MOSFETs and one capacitor. By sharing the data line and power line, it compensates the threshold voltage (V th ) variation of the driving transistor and then improves the image quality and operating speed. This pixel circuit is verified by SMIC 0.18 µm BCD process, and it is integrated into a pixel unit of 4*4.5 µm 2 . From post‐layout simulation, within ±10 mV of V th variation, the emission current deviation ranges only from −0.56% to 0.50% under 240 Hz frame rate, which is −18.4% to 22.3% in the traditional 2T1C pixel circuits.