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P‐24: Impact of SD Vss on top of GOA for Narrow Side Bezel AMOLED Displays
Author(s) -
Tian Hongwei,
Li Dong,
Tan Wen,
Liu Zheng,
Wang Chunyang,
Zheng Can,
Liu Ming,
Liu Tingliang,
Niu Yanan,
Kao Shanchen,
Wang Dawei
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13173
Subject(s) - amoled , layer (electronics) , materials science , reliability (semiconductor) , optoelectronics , composite material , physics , power (physics) , quantum mechanics , active matrix , thin film transistor
A 0.6 mm side Narrow Bezel Back‐Plane (BP) was developed and applied in the 5.5 inch flexible AMOLED display for getting nearly 100% screen‐to‐body ratio. In order to achieve narrowbezel display, the V SS signal line on the side of GOA area, which was patterned at source/drain layer, has been patterned on the top of GOA area with an additional metal layer instead. By analyzing the impact of this second metal layer on top of GOA (gate drive on array), the structure of GOA area has been optimized, which raised up even narrower side bezel for 0.5 mm. Furthermore, an achievable BP process was developed and applied to realize the structure with better performance and reliability.