P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering | Zendy

Min Won Kyung | Zendy; Park Sung Pyo | Zendy; Jung Tae Soo | Zendy; Kim Hee Jun | Zendy; Lee Jin Hyeok | Zendy; Park Kyungho | Zendy; Kim Hyun Jae | Zendy

Premium

P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering

Author(s) -

Min Won Kyung,

Park Sung Pyo,

Jung Tae Soo,

Kim Hee Jun,

Lee Jin Hyeok,

Park Kyungho,

Kim Hyun Jae

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13167

Subject(s) - passivation , thin film transistor , materials science , sputtering , germanium , oxide , optoelectronics , oxide thin film transistor , transistor , copper oxide , thin film , layer (electronics) , metallurgy , nanotechnology , electrical engineering , silicon , voltage , engineering

We have suggested p‐type copper oxide (CuO x ) thin‐film transistors (TFTs) with improved switching characteristics by germanium oxide (GeO x ) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeO x passivated CuO x TFTs were remarkably improved.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research