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P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering
Author(s) -
Min Won Kyung,
Park Sung Pyo,
Jung Tae Soo,
Kim Hee Jun,
Lee Jin Hyeok,
Park Kyungho,
Kim Hyun Jae
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13167
Subject(s) - passivation , thin film transistor , materials science , sputtering , germanium , oxide , optoelectronics , oxide thin film transistor , transistor , copper oxide , thin film , layer (electronics) , metallurgy , nanotechnology , electrical engineering , silicon , voltage , engineering
We have suggested p‐type copper oxide (CuO x ) thin‐film transistors (TFTs) with improved switching characteristics by germanium oxide (GeO x ) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeO x passivated CuO x TFTs were remarkably improved.