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P‐14: Distinguished Poster: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting
Author(s) -
Lee Suhui,
Chen Yuanfeng,
Kim Hyomin,
Kim Jeonggi,
Jang Jin
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13163
Subject(s) - backplane , thin film transistor , active layer , optoelectronics , materials science , amoled , layer (electronics) , oxide thin film transistor , oxide , nanotechnology , electrical engineering , active matrix , engineering , metallurgy
We report stable and high performance a‐IGZO TFT by using bulk‐accumulation (BA) and split active /source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm 2 /Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semi‐transparent AMOLED using the oxide TFT backplane with the gate driver integrated.