P‐14:  Distinguished Poster:  Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting | Zendy

Lee Suhui | Zendy; Chen Yuanfeng | Zendy; Kim Hyomin | Zendy; Kim Jeonggi | Zendy; Jang Jin | Zendy

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P‐14: Distinguished Poster: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting

Author(s) -

Lee Suhui,

Chen Yuanfeng,

Kim Hyomin,

Kim Jeonggi,

Jang Jin

Publication year - 2019

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.13163

Subject(s) - backplane , thin film transistor , active layer , optoelectronics , materials science , amoled , layer (electronics) , oxide thin film transistor , oxide , nanotechnology , electrical engineering , active matrix , engineering , metallurgy

We report stable and high performance a‐IGZO TFT by using bulk‐accumulation (BA) and split active /source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm 2 /Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semi‐transparent AMOLED using the oxide TFT backplane with the gate driver integrated.

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