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P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors
Author(s) -
Wang Sisi,
Lu Lei,
Li Jiapeng,
Xia Zhihe,
Kwok Hoi Sing,
Wong Man
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13160
Subject(s) - thin film transistor , passivation , materials science , fluorine , doping , transistor , optoelectronics , thin film , reduction (mathematics) , oxide , analytical chemistry (journal) , nanotechnology , voltage , layer (electronics) , chemistry , electrical engineering , metallurgy , chromatography , geometry , mathematics , engineering
Presently reported is the use of plasma fluorination treatment based on tetrafluoromethane to enhance the performance of a p‐type SnO thin‐film transistor (TFT). The improved performance metrics include a larger on/off current ratio, a smaller subthreshold swing and a reduction of an originally large positive turn‐on voltage. The effects of such fluorination treatment were also investigated using a host of thin‐film characterization techniques and their origin most plausibly attributed to both the significant reduction of the carrier concentration from ~2 × 10 19 cm −3 to ~4.3 × 10 16 cm −3 and the passivation of the defects. It is demonstrated that fluorination is an effective technique for making higher performance p‐type metal‐oxide TFTs.