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P‐10: A 5.5‐inch Real HD AMOLED Smartphone with IGZO Backplane
Author(s) -
Kuo P.-S.,
Su Chih-Yu,
Lee Chang-Yeh,
Jhih-Jie Huang,
CHING-KAI LO,
Wei Chung-Ching,
Liu Han-Lung,
Shu-Wei Chu,
Wu Shen-Yu,
Hsien Tseng Shih,
Lung Lu Hsuan,
Li Yuanhang,
Cao Shangcao,
Qiao Xiaoping,
Liu Shaofan,
Tseng Chih-Yuan
Publication year - 2019
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13159
Subject(s) - amoled , backplane , materials science , oled , optoelectronics , substrate (aquarium) , thin film transistor , leakage (economics) , reliability (semiconductor) , layer (electronics) , etching (microfabrication) , computer science , active matrix , nanotechnology , computer hardware , power (physics) , oceanography , physics , quantum mechanics , geology , economics , macroeconomics
We developed a 5.5 inch real HD AMOLED smartphone with IGZO backplane. The a‐IGZO TFT with Etching Stop Layer (ESL) structure was fabricated at Gen 6 glass substrate. The aIGZO shows its superiority in low cost and low leakage current. The high reliability of a‐IGZO TFT was demonstrated. The optical and electrical characteristics of OLED cell are also shown.